High-brightness InGaN-GaN flip-chip light-emitting diodes with triple-light scatteriny layers

被引：14
|
作者：
Lee, Chia-En [1 ]
Lee, Yea-Chen [1 ]
Kuo, Hao-Chung [1 ]
Lu, Tien-Chang [1 ]
Wang, Shing-Chung [1 ]
机构：
[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2008年 / 20卷 / 5-8期
关键词：
flip-chip light-emitting diodes (FC-LEDs); naturally textured p-GaN layer; patterned sapphire; sapphire textured layer; triple-light scattering layers;
D O I：
10.1109/LPT.2008.919509
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The flip-chip light-emitting diodes (FC-LEDs) with triple-light scattering layers were investigated comprising a top surface sapphire textured layer, an interface patterned sapphire layer, and a bottom naturally textured p-GaN layer. Such triple-textured layers are useful for light extraction efficiency enhancement. The light output power of FC-LEDs was increased 60% (at 350-mA current injection). compared to that of conventional FC-LEDs by implementing the triple-light scattering layers.
引用
收藏
页码：659 / 661
页数：3
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