Process Development of Ultra-Fine Pitch High Density Micro Bumps

被引:0
|
作者
Yang, Dengfeng [1 ]
Dai, Fengwei [1 ,2 ]
Zhang, Wenqi [1 ,2 ]
Wang, Guojun [1 ]
Cao, Liqiang [1 ,2 ]
机构
[1] Natl Ctr Adv Packaging, Wuxi 214135, Peoples R China
[2] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
来源
2018 19TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT) | 2018年
关键词
Micro Bumps; Fine Pitch; Wafer-level; Undercut;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Fine pitch bumping is the key enabling technology to achieve vertical interconnect in electronic packaging and integration. Cu pillar bump with Cu/Ni/SnAg structure is the widely accepted bump scheme to achieve ideal bump electrical and mechanical performance. In this paper, we report our latest results on the 30 um pitch Cu pillar bump development. The critical process steps, including bump lithography, electroplating, seed layer etching, reflow, are investigated. Good Cu pillar bump profile in 30 um pitch is successfully achieved through the optimization of the process. A typical application using the developed bumping process has been demonstrated.
引用
收藏
页码:1500 / 1503
页数:4
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