A four-phase handshaking asynchronous static RAM design for self-timed systems

被引:0
作者
Sit, VWY [1 ]
Choy, CS [1 ]
Chan, CF [1 ]
机构
[1] Chinese Univ Hong Kong, Shatin, NT, Peoples R China
关键词
asynchronous; memory; self-timed systems;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The motivation of designing asynchronous memory arises from the recent development of asynchronous processors. As different from the conventional design, the proposed asynchronous static RAM can 1) communicate with other asynchronous systems based on a four-phase handshaking control protocol and 2) generate the read/write completion signals with increased average speed by the variable bit-line load concept. The techniques investigated include 1) dual-rail voltage sensing completion detection for read operation and 2) multiple delays completion generation for write operation, In this paper, the performances of these techniques are evaluated for 1-Mb memory with four regions of bit-line segmentation. The simulated and measured results are presented and compared.
引用
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页码:90 / 96
页数:7
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