Defect formation in GaN epitaxial layers due to swift heavy ion irradiation

被引：13

作者：

Kumar, Ashish ^{[1
]}

Kanjilal, D. ^{[2
]}

Kumar, V. ^{[1
]}

Singh, R. ^{[1
]}

机构：

[1] Indian Inst Technol Delhi, Dept Phys, New Delhi, India

[2] IUAC, Div Mat Sci, New Delhi, India

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 2011年 / 166卷 / 8-9期

关键词：

GaN; swift heavy ions; defects; XRD; hall/resistivity; TEM;

D O I：

10.1080/10420150.2011.569716

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

GaN epitaxial layers were irradiated with 200 MeV Ag ions at various fluences. These samples were characterized ex situ by resistivity/Hall, XRD, and transmission electron microscopy (TEM). The resistivity of irradiated layers increased by eight orders of magnitude after irradiation with a fluence of 5 x 10(12) ions/cm(2). The increase in peak width (FWHM) with the incident ion fluence showed a reduction in the crystallinity of epitaxial layers. Cross-sectional TEM images confirmed that at the highest fluence (5 x 10(12) ions/cm(2)), electronic energy loss caused structural defect formation in the GaN layer.

引用

页码：739 / 742

页数：4

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