Effects of Li and Mg doping on microstructure and properties of sol-gel ZnO thin films

被引:134
作者
Fujihara, S [1 ]
Sasaki, C [1 ]
Kimura, T [1 ]
机构
[1] Keio Univ, Fac Sci & Technol, Dept Appl Chem, Kohoku Ku, Yokohama, Kanagawa 2238522, Japan
关键词
electrical properties; films; grain growth; sol-gel processes; ZnO;
D O I
10.1016/S0955-2219(01)00182-0
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Zinc oxide thin films doped with Li and Mg were prepared by the sol-gel method, and effects of doping on microstructure and electrical properties were examined. The doped films exhibited c-axis-orientation after final heating at 500 degreesC for 30 min in flowing oxygen. The ZnO crystallite size increased by doping and the surface of the films became rougher. The current density of the films was reduced by doping probably due to the formation of acceptor levels (Li-doping) and the reduction of oxygen defects (Mg-doping). The film with a nominal composition of Zn0.85Li0.10Mg0.05O showed the lowest current density of 1.7 x 10(-6) A cm(-2) in the present study. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:2109 / 2112
页数:4
相关论文
共 17 条
  • [1] BHATTACHARYA P, 1994, JPN J APPL PHYS, V33, P4103
  • [2] INFLUENCE OF SURFACE PROCESSES ON ELECTRICAL, PHOTOCHEMICAL, AND THERMODYNAMICAL PROPERTIES OF ZINC-OXIDE FILMS
    BONASEWICZ, P
    HIRSCHWALD, W
    NEUMANN, G
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (11) : 2270 - 2278
  • [3] Fluorine doping in transparent conductive ZnO thin films by a sol-gel method using trifluoroacetic acid
    Fujihara, S
    Kusakado, J
    Kimura, T
    [J]. JOURNAL OF MATERIALS SCIENCE LETTERS, 1998, 17 (09) : 781 - 783
  • [4] Preparation of Al- and Li-doped ZnO thin films by sol-gel method
    Fujihara, S
    Sasaki, C
    Kimura, T
    [J]. ELECTROCERAMICS IN JAPAN III, 2000, 181-1 : 109 - 112
  • [5] CURRENT-VOLTAGE CHARACTERISTICS OF ULTRAFINE-GRAINED FERROELECTRIC PB(ZR, TI)O3 THIN-FILMS
    HU, H
    KRUPANIDHI, SB
    [J]. JOURNAL OF MATERIALS RESEARCH, 1994, 9 (06) : 1484 - 1498
  • [6] TEXTURED ALUMINUM-DOPED ZINC-OXIDE THIN-FILMS FROM ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR DEPOSITION
    HU, JH
    GORDON, RG
    [J]. JOURNAL OF APPLIED PHYSICS, 1992, 71 (02) : 880 - 890
  • [7] Ferroelectric behavior of Li-doped ZnO thin films on Si(100) by pulsed laser deposition
    Joseph, M
    Tabata, H
    Kawai, T
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (17) : 2534 - 2536
  • [8] KORB ED, 1966, J AM CERAM SOC, V49, P302
  • [9] Microstructure of TiO2 and ZnO films fabricated by the sol-gel method
    Ohya, Y
    Saiki, H
    Tanaka, T
    Takahashi, Y
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1996, 79 (04) : 825 - 830
  • [10] Preparation of ZnO films with preferential orientation by sol-gel method
    Ohyama, M
    Kozuka, H
    Yoko, T
    Sakka, S
    [J]. JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 1996, 104 (04) : 296 - 300