共 105 条
The growth of bismuth-based cubic pyrochlore dielectric thin films
被引:7
作者:

Gao, Libin
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机构:
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
Univ Elect Sci & Technol China, Collaborat Innovat Ctr Elect Mat & Devices, Chengdu 610054, Peoples R China
Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 610054, Peoples R China Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

Liang, Kexin
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h-index: 0
机构:
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
Univ Elect Sci & Technol China, Collaborat Innovat Ctr Elect Mat & Devices, Chengdu 610054, Peoples R China
Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 610054, Peoples R China Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

Guan, Zhipu
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机构:
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
Univ Elect Sci & Technol China, Collaborat Innovat Ctr Elect Mat & Devices, Chengdu 610054, Peoples R China
Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 610054, Peoples R China Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

Huang, Shixian
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机构:
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
Univ Elect Sci & Technol China, Collaborat Innovat Ctr Elect Mat & Devices, Chengdu 610054, Peoples R China
Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 610054, Peoples R China Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

Chen, Hongwei
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h-index: 0
机构:
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
Univ Elect Sci & Technol China, Collaborat Innovat Ctr Elect Mat & Devices, Chengdu 610054, Peoples R China
Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 610054, Peoples R China Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

Zhang, Jihua
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h-index: 0
机构:
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
Univ Elect Sci & Technol China, Collaborat Innovat Ctr Elect Mat & Devices, Chengdu 610054, Peoples R China
Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 610054, Peoples R China Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
机构:
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
[2] Univ Elect Sci & Technol China, Collaborat Innovat Ctr Elect Mat & Devices, Chengdu 610054, Peoples R China
[3] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 610054, Peoples R China
基金:
中国国家自然科学基金;
关键词:
Cubic pyrochlore films;
Tunability;
Low loss;
Thin film deposition technologies;
PULSED-LASER DEPOSITION;
ELECTRICAL-PROPERTIES;
MICROWAVE PROPERTIES;
SUBSTRATE-TEMPERATURE;
DOPED CONCENTRATION;
TUNABLE PROPERTIES;
OPTICAL-PROPERTIES;
EPITAXIAL-GROWTH;
OXYGEN-PRESSURE;
BST;
D O I:
10.1016/j.ceramint.2018.10.094
中图分类号:
TQ174 [陶瓷工业];
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
Bismuth-based cubic pyrochlore thin films, such as Bi1.5ZnNb1.5O7 (BZN) and Bi1.5MgNb1.5O7 (BMN) thin films show attractive properties for microwave tunable system due to their medium dielectric constant, low dielectric loss, and high dielectric tunability. Several deposition technologies are used for preparing bismuth-based cubic pryochlore thin films. The effects of different thin film deposition approaches on the structure and dielectric properties of BZN/BMN thin films are summarized. The advantages and limitations of bismuth-based cubic pyrochlore thin films deposited by different deposition technologies are also discussed from the viewpoint of dielectric properties.
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收藏
页码:1482 / 1495
页数:14
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