Structural and dielectric properties of epitaxial Sm2O3 thin films

被引：53
|
作者：
Yang, H. [1 ]
Wang, H. [2 ]
Luo, H. M. [1 ]
Feldmann, D. M. [1 ]
Dowden, P. C. [1 ]
DePaula, R. F. [1 ]
Jia, Q. X. [1 ]
机构：
[1] Los Alamos Natl Lab, Superconduct Technol Ctr, Mat Phys & Applicat Div, Los Alamos, NM 87545 USA
[2] Texas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 06期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2842416
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxial Sm2O3 thin films were deposited on (001) SrTiO3 substrates by pulsed laser deposition. The structural and dielectric properties were investigated. Microstructural studies by x-ray diffraction and transmission electron microscopy showed that the Sm2O3 thin films have a cubic structure and an epitaxial relationship of (004)(Sm2)O-3 parallel to(002)(SrTiO3) and [440](Sm2)O-3 parallel to[200](SrTiO3). A high dielectric constant of 30.5 was found, which can be attributed to the cubic structure and the high crystalline quality and shows a potential application of epitaxial Sm2O3 thin film for high-k material. (C) 2008 American Institute of Physics.
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