Crystalline SrTiO3 thin films on silicon by pulsed laser deposition

被引：0
|
作者：
Hao, JH [1 ]
Gao, J [1 ]
机构：
[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
来源：
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2005年 / 19卷 / 1-3期
关键词：
dielectric thin film; silicon; orientation; EPITAXIAL-GROWTH;
D O I：
10.1142/S0217979205028980
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have developed a process to grow SrTiO3 (STO) thin films showing single (110) orientation directly on Si by means of pulsed laser deposition technique. The growth of STO films directly on Si has been described. The crystallinity of the grown STO films was characterized by X-ray diffraction analysis of theta - 2 theta scan and rocking curve. Our results may be of interest for better understanding of the growth based on the perovskite oxide thin films on silicon materials.
引用
收藏
页码：533 / 535
页数：3
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