Performance Research and Fabrication of 1 310 nm Superluminescent Diodes with High Power

In order to optimize the performance of the 1 310 nm superluminescent diode, such as increase the output power of the device. In this simulation, the parameters of waveguide structure, and the heat dissipation for 1 310 nm superluminescent diode with the J-type waveguide have been investigated. The research results show that the waveguide etching depth, bending angle and thickness of the insulating layer were important for achieve high power output. Based on the research results, the superluminescent diode device structure and fabrication process were optimized, and J-type superluminescent diode with a ridge width of 5 mu m, a bending angle of 8 degrees, an etching depth of 1.7 mu m and an insulating layer thickness of 300 nm was prepared. The super-luminescent diode with 1.5 mm straight waveguide length has realized a high output power (42.2 mW) and wide bandwidth (10 nm) under 500 in A continuous-wave operation at room temperature.