A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications

被引：47

作者：

Washio, K ^{[1
]}

Ohue, E ^{[1
]}

Shimamoto, H ^{[1
]}

Oda, K ^{[1
]}

Hayami, R ^{[1
]}

Kiyota, Y ^{[1
]}

Tanabe, M ^{[1
]}

Kondo, M ^{[1
]}

Hashimoto, T ^{[1
]}

Harada, T ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904424

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 0.2-mum self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistor (HBT)/CMOS technology with high-quality passive elements, made by using SOI on a high-resistivity substrate (SOI/HRS), was developed. The SiGe HBTs exhibited high-frequency, high-speed capability with f(max) of 180 GHz and a fast ECL-gate delay of 6.7 ps.

引用

页码：741 / 744

页数：4