Fully-Integrated 6H-SiC JFET Amplifiers for High-Temperature Sensing

被引：1

作者：

Patil, Amita ^{[1
]}

Fu, Xiao-an ^{[1
]}

Mehregany, Mehran ^{[1
]}

Garverick, Steven ^{[1
]}

机构：

[1] Case Western Reserve Univ, Elect Engn & Comp Sci, Cleveland, OH 44106 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 | 2010年 / 645-648卷

关键词：

high-temperature; silicon carbide; differential amplifiers; sensor interface circuits; junction field effect transistor;

D O I：

10.4028/www.scientific.net/MSF.645-648.1107

中图分类号：

TB33 [复合材料];

学科分类号：

摘要：

Fully monolithic, transimpedance and differential voltage amplifiers are reported in this paper based on 6H-SiC, n-channel, depletion-mode JFETs. The single-stage transimpedance amplifier has a low-frequency gain of similar to 222 k Omega at room temperature, with similar to 2% gain matching for copies on a 6-mm x 6-mm die. The transimpedance gain is set by an integrated resistor and is similar to 1.1 M Omega at 450 degrees C. The single-stage, differential voltage amplifier has a typical gain-bandwidth of similar to 2.8 MHz at 600 degrees C and a typical open-loop voltage gain of similar to 35.8 dB at 25 degrees C, with less than 1-dB gain variation from 25-600 degrees C.

引用

页码：1107 / +

页数：2

共 5 条

[1] Brown DM, 1997, PHYS STATUS SOLIDI A, V162, P459, DOI 10.1002/1521-396X(199707)162:1<459::AID-PSSA459>3.0.CO
[2] 2-4
[3] FU XA, 2009, P ICSCRM
[4] Stable electrical operation of 6H-SiC JFETs and ICs for thousands of hours at 500 °C
Neudeck, Philip G.
Spry, David J.
Chen, Liang-Yu
Beheim, Glenn M.
Okojie, Robert S.
Chang, Carl W.
Meredith, Roger D.
Ferrier, Terry L.
Evans, Laura J.
Krasowski, Michael J.
Prokop, Norman F.
[J]. IEEE ELECTRON DEVICE LETTERS, 2008, 29 (05) : 456 - 459
[5] SHEPPARD ST, 2000, HIGH TEMP EL C

← 1 →