On the use of MEIS cartography for the determination of Si1-xGex thin-film strain

被引：5
作者：
Avila, T. S. [1 ]
Fichtner, P. F. P. [1 ]
Hentz, A. [1 ]
Grande, P. L. [1 ]
机构：
[1] Univ Fed Rio Grande do Sul, Inst Phys, Ion Implantat Lab, Ave Bento Goncalves 9500, BR-91501970 Porto Alegre, RS, Brazil
来源：
THIN SOLID FILMS | 2016年 / 611卷
关键词：
Ion beam analysis; SiGe blocking; ENERGY ION-SCATTERING; TOROIDAL ELECTROSTATIC ANALYZER; RESOLUTION; HETEROSTRUCTURES; IMPLANTATION; SPECTROSCOPY; INTERFACE; MOBILITY; PROFILE; LAYERS;
D O I：
10.1016/j.tsf.2016.05.014
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The cartography from MEIS (Medium Energy Ion Scattering) is used to measure lattice deformation of strained Si1-xGex/Si heterogeneous epitaxial structures. Higher crystallographic index directions are shown to be specially sensitive to strain leading to a clear quantification of the strain with high sensitivity and accuracy. We provide a simple method to determine the lattice deformation and checked it against full Monte-Carlo simulations. Since MEIS has an excellent depth resolution it can be potentially used to quantify depth-dependent strain in thin-films as well as in nano-structured materials. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：101 / 106
页数：6
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