A Small Spot, Inert Gas, Ion Milling Process as a Complementary Technique to Focused Ion Beam Specimen Preparation

被引：15
|
作者：
Fischione, Paul E. [1 ]
Williams, Robert E. A. [2 ]
Genc, Arda [2 ]
Fraser, Hamish L. [2 ]
Dunin-Borkowski, Rafal E. [3 ,4 ]
Luysberg, Martina [3 ,4 ]
Bonifacio, Cecile S. [1 ]
Kovacs, Andras [3 ,4 ]
机构：
[1] EA Fischione Instruments Inc, 9003 Corp Circle, Export, PA 15632 USA
[2] Ohio State Univ, Ctr Accelerated Maturat Mat, 1305 Kinnear Rd, Columbus, OH 43212 USA
[3] Forschungszentrum Julich, Ernst Ruska Ctr Microscopy & Spect Electrons, Wilhelm Johnen Str, D-52425 Julich, Germany
[4] Forschungszentrum Julich, Peter Grunberg Inst, Wilhelm Johnen Str, D-52425 Julich, Germany
来源：
MICROSCOPY AND MICROANALYSIS | 2017年 / 23卷 / 04期
关键词：
ion milling; focused ion beam; amorphous damage; implantation; artifact; TRANSMISSION ELECTRON-MICROSCOPY; SAMPLE PREPARATION; ATOMIC-RESOLUTION; CONTRAST STEM; DAMAGE; SURFACE; FIB;
D O I：
10.1017/S1431927617000514
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper reports on the substantial improvement of specimen quality by use of a low voltage (0.05 to similar to 1 keV), small diameter (similar to 1 mu m), argon ion beam following initial preparation using conventional broad-beam ion milling or focused ion beam. The specimens show significant reductions in the amorphous layer thickness and implanted artifacts. The targeted ion milling controls the specimen thickness according to the needs of advanced aberration-corrected and/or analytical transmission electron microscopy applications.
引用
收藏
页码：782 / 793
页数：12
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