Bipolar Doping by Intrinsic Defects and Magnetic Phase Instability in Monolayer CrI3

被引:48
作者
Wang, Rui [1 ]
Su, Yan [2 ]
Yang, Guohui [1 ]
Zhang, Junfeng [1 ]
Zhang, Shengbai [3 ]
机构
[1] Shanxi Normal Univ, Key Lab Spectral Measurement & Anal Shanxi Prov, Linfen 041004, Shanxi, Peoples R China
[2] Dalian Univ Technol, Minist Educ, Key Lab Mat Modificat Laser Electron & Ion Beams, Dalian 116024, Peoples R China
[3] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA
基金
美国能源部; 中国国家自然科学基金;
关键词
TOTAL-ENERGY CALCULATIONS; GRAIN-BOUNDARIES; TRANSPORT-PROPERTIES; ELECTRIC-FIELD; FERROMAGNETISM; GRAPHENE; TRANSITION; CRYSTAL; OXIDE;
D O I
10.1021/acs.chemmater.9b04645
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
As a two-dimensional direct band gap semiconductor with unique electronic and magnetic properties, monolayer chromium triiodide (CrI3) has a great potential for spintronic applications. Under the guidance of the defect theory, we adopt first-principles calculation to determine the structural, thermodynamic, electronic, and magnetic properties of point defects of monolayer CrI3. Twenty kinds of point defects, including vacancies, interstitial, substitution, and bond-rotation defects have been investigated. Either the metalloid or metallic single atom vacancies is energetically stable depends on the chemical potential of iodide, leading to the intrinsic n-type and p-type dopings, respectively. More interestingly, a ferromagnetic to antiferromagnetic transition of the magnetic phase can be induced 0.27 for most type of point defects, which can be explained by a simple Heisenberg model. The content of present investigation contributes to the atomic-scale understanding of the electric and magnetic properties of monolayer CrI3.
引用
收藏
页码:1545 / 1552
页数:8
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