The role of oxygen vacancy in fluorine-doped SnO2 films

被引：22
|
作者：
Zhang, B. [2 ]
Tian, Y.
Zhang, J. X. [1 ,2 ]
Cai, W. [2 ]
机构：
[1] Shandong Univ, Sch Mat Sci & Engn, Minist Educ, Key Lab Liquid Solid Struct Evolut & Proc Mat, Jinan 250061, Shandong, Peoples R China
[2] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
来源：
PHYSICA B-CONDENSED MATTER | 2011年 / 406卷 / 09期
关键词：
FTO film; Oxygen vacancy; Reflectivity; Mobility; SPRAY-DEPOSITED FLUORINE; OXIDE THIN-FILMS; ELECTRICAL-PROPERTIES; TRANSPARENT; PECULIARITIES;
D O I：
10.1016/j.physb.2011.02.037
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The fluorine-doped tin oxide films (FTO) were prepared with SnCl2 and SnCl4, precursors using the spray pyrolysis method. The vibrational feature of oxygen vacancy in FTIR has been identified. The oxygen vacancy plays a role of donor in FTO films, although it becomes inconspicuous with an increase in fluorine concentration in the solution. The substitution of fluorine for oxygen has also been confirmed by FTIR spectrum, and it further indicates the production of fluorine doping is alpha-SnF2. The reflectivity shows a close relation with the carrier concentration, suggested by the Drude theory. The discussion of scattering mechanism in FTO films suggests that impurity ions are the main scattering centers for free carriers. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：1822 / 1826
页数：5
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