Depletion-mode n-channel organic field-effect transistors based on NTCDA

被引：14

作者：

Zhu, M ^{[1
]}

Liang, GR ^{[1
]}

Cui, TH ^{[1
]}

Varahramyan, K ^{[1
]}

机构：

[1] Louisiana Tech Univ, Inst Micromfg, Ruston, LA 71272 USA

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 10期

关键词：

NTCDA; organic field-effect transistor (OFET); depletion-mode; energy level;

D O I：

10.1016/S0038-1101(03)00141-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The depletion-mode n-channel organic field-effect transistors (OFETs) based on naphthalene-tetracarboxylic-dianhydride (NTCDA) were fabricated and characterized. Electrical characteristics of the OFETs were demonstrated and analyzed under the depletion-mode operation. The mobility of NTCDA is about 0.016 cm(2) V-1 s(-1). The threshold voltage is -32 V, and cut off current is 1.76 nA. The on/off ratio extracted from transfer characteristics at saturation region (V-ds = 60 V) is 2.25 x 10(2). (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：1855 / 1858

页数：4

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