Properties of free-standing 3C-SiC monocrystals grown on undulant-Si(001) substrate

被引：0

作者：

Nagasawa, H ^{[1
]}

Yagi, K ^{[1
]}

Kawahara, T ^{[1
]}

Hatta, N ^{[1
]}

机构：

[1] HOYA Adv Semicond Technol, Akishima, Tokyo 1968510, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS - 2002 | 2002年 / 433-4卷

关键词：

3C-SiC; anisotropy; hall effect; hetero-epitaxy; twin boundary; undulant-Si; XRC;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

3C-SiC was grown epitaxially on an "undulant-Si" substrate with countered slopes oriented in the [ I 10] and [ I 10] directions. Twinning domains in the (I 11) or (I 11) planes were annihilated by combining with counter-twinning domains, while those parallel to (I 11) or (I 11) self-vanished. The free-standing 3C-SiC exhibited remarkable anisotropy in its bending and electrical properties. The origin of these properties is discussed by considering the lattice structure around the twinning domain.

引用

页码：3 / 8

页数：6

共 4 条

[1] Theoretical calculation of stacking fault energies in silicon carbide [J].

Iwata, H ;

Lindefelt, U ;

Öberg, S ;

Briddon, PR .

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 :439-442

[2] 3C-SiC hetero-epitaxial growth on undulant Si(001) substrate [J].

Nagasawa, H ;

Yagi, K ;

Kawahara, T .

JOURNAL OF CRYSTAL GROWTH, 2002, 237 (1-4 II) :1244-1249

[3] Heteroepitaxial growth and characteristics of 3C-SiC on large-diameter Si(001) substrates [J].

Nagasawa, H ;

Kawahara, T ;

Yagi, K .

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 :319-322

[4]

PENSL G, 2001, MAT RES SOC S P, V640

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