Deep centres appearing in 6H and 4H SiC after proton irradiation

被引：5

作者：

Lebedev, AA

Davydov, DV

Strel'chuk, AM

Kuznetsov, AN

Bogdanova, EV

Kozlovski, VV

Savkina, NS

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, RU-194021 St Petersburg, Russia

[2] St Petersburg State Tech Univ, RU-194251 St Petersburg, Russia

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

compensation; deep centers; DLTS; irradiation; protons;

D O I：

10.4028/www.scientific.net/MSF.338-342.973

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the present work the effect of irradiation with 8-MeV protons at doses (D) in the range 1.10(14) - 1.10(16) cm(-2) on p-n structures and Schottky diodes based on epitaxial 6H and 4H SiC layers was studied. Commercial (CREE) samples and samples fabricated by sublimation epitaxy (SE) in our laboratory were used. Parameters and concentrations of deep centres (DC) were determined by transient capacitance and current spectroscopy. It was shown that proton irradiation may lead to an increase in the initial doping level of 6H-SiC samples. The obtained results are analysed and the properties of radiation-induced defects are discussed.

引用

页码：973 / 976

页数：4

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