Theory of structural and electronic properties of cubic SiC surfaces

被引：5

作者：

Pollmann, J ^{[1
]}

Krüger, P ^{[1
]}

Lu, WC ^{[1
]}

机构：

[1] Univ Munster, Inst Theoret Phys Festkorperphys 2, DE-48149 Munster, Germany

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

atomic structure; electronic structure; local density theory; surface;

D O I：

10.4028/www.scientific.net/MSF.338-342.369

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The current understanding of the atomic and electronic structure of polar cubic 3C-SiC(001) surfaces, as it derives from ab-initio calculations, is briefly addressed in the light of recent experimental data. Very encouraging agreement between the theoretical results and the available data is observed. The origin and nature of the distinctively different reconstructions of 3C-SiC(001) surfaces, as compared to those of the C(001) and Si(001) surfaces, is discussed.

引用

页码：369 / 374

页数：6

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