Rapid thermal annealing induced engineering of surface and photoluminescence properties of (K,Na)NbO3 thin films for optoelectronic applications

The present study is focused on understanding the mechanism of luminescence behavior and how it gets affected with post annealing temperature via rapid thermal annealing of (K,Na)NbO3 thin films. The crystalline KNN perovskite structure with preferred (001)-orientation is observed upon annealing at 750 and 800 degrees C. After annealing, the evolution kinetics of surface features is resulted from the simultaneous evaporationrecondensation and volume diffusion of particles. The volatilization of alkali species after annealing and, in contrast, the lattice oxygen and Nb5+ chemical state of niobium related to KNN is enhanced. Narrowing of optical band gap after annealing is attributed to the generation of shallow defects deep below the conduction band owing to order-disorder and/or distortion in NbO6 octahedra. Photoluminescence (PL) quenching behavior is observed after RTA with 290 nm excitation wavelength. A strong blue emission is observed at 800 degrees C after exciting with 266 nm wavelength. The kinetics of decay lifetime from time-resolved PL results revealed the enhancement of transitions more likely via radiative states. The RTA induced results specify that KNN can be one of the promising candidates for use in LEDs, smart glass windows, optical switches/sensors, and optoelectronic devices.