The fascinating electronic and optoelectronic properties of free-standing graphene has led to the exploration of alternative two-dimensional materials that can be easily integrated with current generation of electronic technologies. In contrast to 2D oxide and dichalcogenides, elemental 2D analogues of graphene, which include monolayer silicon (silicene), are fast emerging as promising alternatives, with predictions of high degree of integration with existing technologies. This article reviews this emerging class of 2D elemental materials - silicene, germanene, stanene, and phosphorene - with emphasis on fundamental properties and synthesis techniques. The need for further investigations to establish controlled synthesis techniques and the viability of such elemental 2D materials is highlighted. Future prospects harnessing the ability to manipulate the electronic structure of these materials for nano-and opto-electronic applications are identified. (C) 2014 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
机构:
Univ Hyderabad, Adv Ctr Res High Energy Mat ACRHEM, Hyderabad 500046, Andhra Pradesh, IndiaUniv Hyderabad, Adv Ctr Res High Energy Mat ACRHEM, Hyderabad 500046, Andhra Pradesh, India
Appalakondaiah, S.
Vaitheeswaran, G.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Hyderabad, Adv Ctr Res High Energy Mat ACRHEM, Hyderabad 500046, Andhra Pradesh, IndiaUniv Hyderabad, Adv Ctr Res High Energy Mat ACRHEM, Hyderabad 500046, Andhra Pradesh, India
Vaitheeswaran, G.
Lebegue, S.
论文数: 0引用数: 0
h-index: 0
机构:
Nancy Univ Boite Postale 239, Inst Jean Barriol, CNRS, UMR 7036,CRM2,Lab Cristallog Resonance Magnet & M, F-54506 Vandoeuvre Les Nancy, FranceUniv Hyderabad, Adv Ctr Res High Energy Mat ACRHEM, Hyderabad 500046, Andhra Pradesh, India
Lebegue, S.
Christensen, N. E.
论文数: 0引用数: 0
h-index: 0
机构:
Aarhus Univ, Dept Phys & Astron, DK-8000 Aarhus C, DenmarkUniv Hyderabad, Adv Ctr Res High Energy Mat ACRHEM, Hyderabad 500046, Andhra Pradesh, India
Christensen, N. E.
Svane, A.
论文数: 0引用数: 0
h-index: 0
机构:
Aarhus Univ, Dept Phys & Astron, DK-8000 Aarhus C, DenmarkUniv Hyderabad, Adv Ctr Res High Energy Mat ACRHEM, Hyderabad 500046, Andhra Pradesh, India
机构:
Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, Ibaraki 3040044, JapanNatl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, Ibaraki 3040044, Japan
Arafune, R.
Lin, C. -L.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Tokyo, Grad Sch Frontier Sci, Dept Adv Mat Sci, Chiba 2778561, JapanNatl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, Ibaraki 3040044, Japan
Lin, C. -L.
Nagao, R.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Tokyo, Grad Sch Frontier Sci, Dept Adv Mat Sci, Chiba 2778561, JapanNatl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, Ibaraki 3040044, Japan
Nagao, R.
Kawai, M.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Tokyo, Grad Sch Frontier Sci, Dept Adv Mat Sci, Chiba 2778561, JapanNatl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, Ibaraki 3040044, Japan
Kawai, M.
Takagi, N.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Tokyo, Grad Sch Frontier Sci, Dept Adv Mat Sci, Chiba 2778561, JapanNatl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, Ibaraki 3040044, Japan
机构:
Univ Hyderabad, Adv Ctr Res High Energy Mat ACRHEM, Hyderabad 500046, Andhra Pradesh, IndiaUniv Hyderabad, Adv Ctr Res High Energy Mat ACRHEM, Hyderabad 500046, Andhra Pradesh, India
Appalakondaiah, S.
Vaitheeswaran, G.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Hyderabad, Adv Ctr Res High Energy Mat ACRHEM, Hyderabad 500046, Andhra Pradesh, IndiaUniv Hyderabad, Adv Ctr Res High Energy Mat ACRHEM, Hyderabad 500046, Andhra Pradesh, India
Vaitheeswaran, G.
Lebegue, S.
论文数: 0引用数: 0
h-index: 0
机构:
Nancy Univ Boite Postale 239, Inst Jean Barriol, CNRS, UMR 7036,CRM2,Lab Cristallog Resonance Magnet & M, F-54506 Vandoeuvre Les Nancy, FranceUniv Hyderabad, Adv Ctr Res High Energy Mat ACRHEM, Hyderabad 500046, Andhra Pradesh, India
Lebegue, S.
Christensen, N. E.
论文数: 0引用数: 0
h-index: 0
机构:
Aarhus Univ, Dept Phys & Astron, DK-8000 Aarhus C, DenmarkUniv Hyderabad, Adv Ctr Res High Energy Mat ACRHEM, Hyderabad 500046, Andhra Pradesh, India
Christensen, N. E.
Svane, A.
论文数: 0引用数: 0
h-index: 0
机构:
Aarhus Univ, Dept Phys & Astron, DK-8000 Aarhus C, DenmarkUniv Hyderabad, Adv Ctr Res High Energy Mat ACRHEM, Hyderabad 500046, Andhra Pradesh, India
机构:
Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, Ibaraki 3040044, JapanNatl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, Ibaraki 3040044, Japan
Arafune, R.
Lin, C. -L.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Tokyo, Grad Sch Frontier Sci, Dept Adv Mat Sci, Chiba 2778561, JapanNatl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, Ibaraki 3040044, Japan
Lin, C. -L.
Nagao, R.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Tokyo, Grad Sch Frontier Sci, Dept Adv Mat Sci, Chiba 2778561, JapanNatl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, Ibaraki 3040044, Japan
Nagao, R.
Kawai, M.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Tokyo, Grad Sch Frontier Sci, Dept Adv Mat Sci, Chiba 2778561, JapanNatl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, Ibaraki 3040044, Japan
Kawai, M.
Takagi, N.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Tokyo, Grad Sch Frontier Sci, Dept Adv Mat Sci, Chiba 2778561, JapanNatl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, Ibaraki 3040044, Japan