Crystallographic defects under device-killing surface faults in a homoepitaxially grown film of SiC

被引：44

作者：

Okada, T ^{[1
]}

Kimoto, T

Yamai, K

Matsunami, H

Inoko, F

机构：

[1] Univ Tokushima, Dept Mech Engn, Tokushima 7708506, Japan

[2] Kyoto Univ, Dept Elect Engn, Kyoto 6068501, Japan

来源：

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 2003年 / 361卷 / 1-2期

关键词：

silicon carbide (SiC); polytype; homoepitaxy; surface morphological fault; transmission electron microscopy (TEM); stacking fault (SF);

D O I：

10.1016/S0921-5093(03)00520-3

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Conventional transmission electron microscopy (TEM) was conducted to identify crystallographic defects under some types of "device-killing" surface morphological faults on an epitaxial film grown on a 4H-SiC (0 0 0 1) off-cut substrate. The "comet" fault composed of a nucleus and a tail is accompanied by 3C-SiC of zinc blende structure. The "triangular defect" characterized by its isosceles shape is associated with stacking fault (SF) on the (0 0 0 1)(4H) plane. Based on TEM contrast analysis, stacking faults on I I I I I planes introduced in a 3C-SiC "comet" fault and the formation mechanism of "triangular defect" are discussed. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：67 / 74

页数：8

共 21 条

[1] COMPARISON OF 6H-SIC, 3C-SIC, AND SI FOR POWER DEVICES [J].

BHATNAGAR, M ;

BALIGA, BJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (03) :645-655

[2]

HIRTH JP, 1992, THEORY DISLOCATIONS, P373

[3]

HIRTH JP, 1992, THEORY DISLOCATIONS, P317

[4] Direct evidence of micropipe-related pure superscrew dislocations in SiC [J].

Huang, XR ;

Dudley, M ;

Vetter, WM ;

Huang, W ;

Wang, S ;

Carter, CH .

APPLIED PHYSICS LETTERS, 1999, 74 (03) :353-355

[5] On the peculiarities of bright/dark contrast in HRTEM images of SiC polytypes [J].

Kaiser, U ;

Chuvilin, A ;

Richter, W .

ULTRAMICROSCOPY, 1999, 76 (1-2) :21-37

[6] Effects of surface defects on the performance of 4H-and 6H-SiC pn junction diodes [J].

Kimoto, T ;

Miyamoto, N ;

Matsunami, H .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 :349-352

[7] HIGH-VOLTAGE (GREATER-THAN 1-KV) SIC SCHOTTKY-BARRIER DIODES WITH LOW ON-RESISTANCES [J].

KIMOTO, T ;

URUSHIDANI, T ;

KOBAYASHI, S ;

MATSUNAMI, H .

IEEE ELECTRON DEVICE LETTERS, 1993, 14 (12) :548-550

[8]

Kuroda N., 1987, 19 C SOL STAT DEV MA, P227

[9] DEFECTS IN PLASTICALLY DEFORMED 6H SIC SINGLE-CRYSTALS STUDIED BY TRANSMISSION ELECTRON-MICROSCOPY [J].

MAEDA, K ;

SUZUKI, K ;

FUJITA, S ;

ICHIHARA, M ;

HYODO, S .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1988, 57 (04) :573-592

[10] Step-controlled epitaxial growth of SiC: high quality homoepitaxy [J].

Matsunami, H ;

Kimoto, T .

MATERIALS SCIENCE & ENGINEERING R-REPORTS, 1997, 20 (03) :125-166

← 1 2 3 →