Effects of seeding methods on the fabrication of microcrystalline silicon solar cells using radio frequency plasma enhanced chemical vapor deposition

被引:16
作者
Li, YM
Li, LW
Selvan, JAA
Delahoy, AE
Levy, RA
机构
[1] New Jersey Inst Technol, Dept Phys, Newark, NJ 07102 USA
[2] Energy Photovoltaics Inc, Lawrenceville, NJ 08648 USA
关键词
solar cells; silicon; chemical vapor deposition; nucleation;
D O I
10.1016/j.tsf.2004.12.029
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Single junction p-i-n pc-Si:H solar cells were prepared in a low-cost, large-area single chamber radio frequency plasma enhanced chemical vapor deposition system. The effects of seeding processes on the growth of mu c-Si:H i-layers and performance of mu c-Si:H solar cells were investigated. Seeding processes, usually featured by highly hydrogen rich plasma, are effective in inducing the growth of mu c-Si:H i-layers. It has been demonstrated that p-layer seeding methods are preferable to i-layer seeding. While performance of mu c-Si:H solar cells produced by i-layer seeding methods was usually limited by very low fill factors, pc-Si:H solar cells with good initial and stabilized conversion efficiencies were obtained by p-layer seeding. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:84 / 88
页数:5
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