The mechanism of Marangoni convection influence on dopant distribution in Ge space-grown single crystals

被引：18

作者：

Artemyev, VK

Folomeev, VI

Ginkin, VP

Kartavykh, AV

Mil'vidskii, MG

Rakov, VV

机构：

[1] Inst Chem Problems Microelect, Moscow 109017, Russia

[2] Obninsk Phys & Power Engn Inst, Obninsk 249020, Kaluga Region, Russia

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 223卷 / 1-2期

关键词：

computer simulation; heat transfer; mass transfer; floating zone technique; microgravity conditions; semiconducting germanium;

D O I：

10.1016/S0022-0248(00)00981-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A direct numerical simulation of heat mass transfer processes in the melt under the influence of surface tension forces on free surfaces during germanium crystal growth by the floating zone (FZ) method under microgravity conditions is performed. Development in time, and interaction between thermal and solutal kinds of Marangoni convection in the molten zone taking into account the temperature dependence of melt viscosity are analyzed. The obtained results explain anomalous distributions of Ga dopant in Ge single crystals grown aboard Russian Photon series spacecrafts (SC). (C) 2001 Elsevier Science B.V, All rights reserved.

引用

页码：29 / 37

页数：9

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