Analysis and Modeling of Self-Heating Effect in Bulk FinFET

被引：0
作者：
Lin, Shawn [1 ]
Li, SenSheng [1 ]
Shen, Li [1 ]
Lu, Lianhua [1 ]
Yu, Shaofeng [1 ]
机构：
[1] SMIC, Technol Res & Dev Ctr, Shanghai, Peoples R China
来源：
2017 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC 2017) | 2017年
关键词：
Self-heating; Model; SPICE;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Self-heating effect in bulk FinFET is briefly studied in this paper. The layout dependence of thermal resistance and thermal capacitance are assumed and the correction method is proposed to improve the accuracy of thermal parameter. Measuring methods and their corresponding test structures are also summarized. Besides, two realization methods of self-heating effect for circuit simulation are also discussed.
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收藏
页数：2
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