Analysis and Modeling of Self-Heating Effect in Bulk FinFET

被引：0
|
作者：
Lin, Shawn [1 ]
Li, SenSheng [1 ]
Shen, Li [1 ]
Lu, Lianhua [1 ]
Yu, Shaofeng [1 ]
机构：
[1] SMIC, Technol Res & Dev Ctr, Shanghai, Peoples R China
来源：
2017 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC 2017) | 2017年
关键词：
Self-heating; Model; SPICE;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Self-heating effect in bulk FinFET is briefly studied in this paper. The layout dependence of thermal resistance and thermal capacitance are assumed and the correction method is proposed to improve the accuracy of thermal parameter. Measuring methods and their corresponding test structures are also summarized. Besides, two realization methods of self-heating effect for circuit simulation are also discussed.
引用
收藏
页数：2
相关论文
共 50 条
  • [21] Self-heating impact on TDDB in bulk FinFET devices: Uniform vs Non-uniform Stress
    Chbili, Z.
    Kerber, A.
    2016 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP (IIRW), 2016, : 45 - 48
  • [22] On the Output Conductance Dispersion due to Traps and Self-Heating in Large Bulk, FDSOI and FinFET nMOS Devices
    Tondelli, L.
    Scholten, A. J.
    Asanovski, R.
    Pijper, R. M. T.
    Dinh, T., V
    Selmil, L.
    2024 50TH IEEE EUROPEAN SOLID-STATE ELECTRONICS RESEARCH CONFERENCE, ESSERC 2024, 2024, : 345 - 348
  • [23] Analysis of the self-heating effect in UTBOX devices
    Rodrigues, M.
    Cruz, E. O.
    Galeti, M.
    Martino, J. A.
    MICROELECTRONICS TECHNOLOGY AND DEVICES - SBMICRO 2012, 2012, 49 (01): : 153 - 160
  • [24] Impact of Self-Heating on Performance, Power and Reliability in FinFET Technology
    van Santen, Victor M.
    Genssler, Paul R.
    Prakash, Om
    Thomann, Simon
    Henkel, Joerg
    Amrouch, Hussam
    2020 25TH ASIA AND SOUTH PACIFIC DESIGN AUTOMATION CONFERENCE, ASP-DAC 2020, 2020, : 68 - 73
  • [25] Impact of Self-heating on Performance and Reliability in FinFET and GAAFET Designs
    Chhabria, Vidya A.
    Sapatnekar, Sachin S.
    PROCEEDINGS OF THE 2019 20TH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN (ISQED), 2019, : 235 - 240
  • [26] An Experimental Approach to Characterizing the Channel Local Temperature Induced by Self-Heating Effect in FinFET
    Hsieh, E. Ray
    Jiang, Meng-Ru
    Lin, Jian-Li
    Chung, Steve S.
    Chen, Tse Pu
    Huang, Shih An
    Chen, Tai-Ju
    Cheng, Osbert
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2018, 6 (01): : 866 - 874
  • [27] Characterization and Modeling of Self-Heating in Nanometer Bulk-CMOS at Cryogenic Temperatures
    Hart, P. A.
    Babaie, M.
    Vladimirescu, A.
    Sebastiano, F.
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021, 9 : 891 - 901
  • [28] Self-Heating in 28 nm Bulk and FDSOI
    Makovejev, S.
    Planes, N.
    Haond, M.
    Flandre, D.
    Raskin, J. -P.
    Kilchytska, V.
    2015 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS), 2015, : 41 - 44
  • [29] Study on the regulation factors and mechanism of self-heating effects in non-rectangular 14 nm bulk FinFET
    Qin, Zhaohui
    Chen, Lan
    Lu, Renjie
    Wang, Yali
    Hao, Xiaoran
    Chen, Rong
    Sun, Yan
    Du, Qin
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2024, 39 (09)
  • [30] Impact of Self-Heating Effect in Hot Carrier Injection Modeling
    Lee, Dong Seup
    Varghese, Dhanoop
    Sonnet, Arif
    Joh, Jungwoo
    Venugopal, Archana
    Krishnan, Srikanth
    PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2018, : 315 - 318
12345