Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3

被引：18

作者：

Zhang, Guozhen ^{[1
]}

Wu, Hao ^{[1
]}

Chen, Chao ^{[1
]}

Wang, Ti ^{[1
]}

Yue, Jin ^{[1
]}

Liu, Chang ^{[1
]}

机构：

[1] Wuhan Univ, Sch Phys & Technol, Key Lab Artificial Micro & Nanostruct, Minist Educ, Wuhan 430072, Peoples R China

来源：

NANOSCALE RESEARCH LETTERS | 2015年 / 10卷

关键词：

Transparent capacitors; Atomic layer deposition; Flexible devices; THIN-FILM TRANSISTORS; ADVANCED CMOS DEVICES; CARBON NANOTUBE; DEPOSITION; OXIDES;

D O I：

10.1186/s11671-015-0784-8

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3 dielectrics have been fabricated on indium tin oxide-coated polyethylene naphthalate substrates by atomic layer deposition. A capacitance density of 7.8 f Gamma/mu m(2) at 10 KHz was obtained, corresponding to a dielectric constant of 26.3. Moreover, a low leakage current density of 3.9 x 10(-8) A/cm(2) at 1 V has been realized. Bending test shows that the capacitors have better performances in concave conditions than in convex conditions. The capacitors exhibit an average optical transmittance of about 70% in visible range and thus open the door for applications in transparent and flexible integrated circuits.

引用

页数：5

共 21 条

[1] Arsenic decapping and pre-atomic layer deposition trimethylaluminum passivation of Al2O3/InGaAs(100) interfaces [J].

Ahn, Jaesoo ;

Kent, Tyler ;

Chagarov, Evgueni ;

Tang, Kechao ;

Kummel, Andrew C. ;

McIntyre, Paul C. .

APPLIED PHYSICS LETTERS, 2013, 103 (07)

[2] Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances [J].

Fortunato, E. ;

Barquinha, P. ;

Martins, R. .

ADVANCED MATERIALS, 2012, 24 (22) :2945-2986

[3] Al-doped TiO2 films with ultralow leakage currents for next generation DRAM capacitors [J].

Kim, Seong Keun ;

Choi, Gyu-Jin ;

Lee, Sang Young ;

Seo, Minha ;

Lee, Sang Woon ;

Han, Jeon Hwan ;

Ahn, Hyo-Shin ;

Han, Seungwu ;

Hwang, Cheol Seong .

ADVANCED MATERIALS, 2008, 20 (08) :1429-+

[4] Flexible transparent conductive materials based on silver nanowire networks: a review [J].

Langley, Daniel ;

Giusti, Gael ;

Mayousse, Celine ;

Celle, Caroline ;

Bellet, Daniel ;

Simonato, Jean-Pierre .

NANOTECHNOLOGY, 2013, 24 (45)

[5] Tailoring dielectric relaxation in ultra-thin high-dielectric constant nanolaminates for nanoelectronics [J].

Lee, Geunhee ;

Lai, Bo-Kuai ;

Phatak, Charudatta ;

Katiyar, Ram S. ;

Auciello, Orlando .

APPLIED PHYSICS LETTERS, 2013, 102 (14)

[6] High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2 [J].

Lin, T. D. ;

Chang, W. H. ;

Chu, R. L. ;

Chang, Y. C. ;

Chang, Y. H. ;

Lee, M. Y. ;

Hong, P. F. ;

Chen, Min-Cheng ;

Kwo, J. ;

Hong, M. .

APPLIED PHYSICS LETTERS, 2013, 103 (25)

[7] Improved reliability from a plasma-assisted metal-insulator-metal capacitor comprising a high-k HfO2 film on a flexible polyimide substrate [J].

Meen, Jagan Singh ;

Chu, Min-Ching ;

Kuo, Shiao-Wei ;

Chang, Feng-Chih ;

Ko, Fu-Hsiang .

PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2010, 12 (11) :2582-2589

[8] Al2O3 formation on Si by catalytic chemical vapor deposition [J].

Ogita, YI ;

Iehara, S ;

Tomita, T .

THIN SOLID FILMS, 2003, 430 (1-2) :161-164

[9] A review of fabrication and applications of carbon nanotube film-based flexible electronics [J].

Park, Steve ;

Vosguerichian, Michael ;

Bao, Zhenan .

NANOSCALE, 2013, 5 (05) :1727-1752

[10] Advanced high-k dielectric amorphous LaGdO3 based high density metal-insulator-metal capacitors with sub-nanometer capacitance equivalent thickness [J].

Pavunny, S. P. ;

Misra, P. ;

Scott, J. F. ;

Katiyar, R. S. .

APPLIED PHYSICS LETTERS, 2013, 102 (25)

← 1 2 3 →