Three-transistor one-time programmable (OTP) ROM cell array using standard CMOS gate oxide antifuse

被引：42

作者：

Kim, J ^{[1
]}

Lee, K

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn & Comp Sci, Taejon, South Korea

[2] MICROS, Res Ctr, Taejon 305701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 09期

关键词：

CMOS antifuse; CMOS OTP; gate-oxide breakdown; OTP ROM;

D O I：

10.1109/LED.2003.815429

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A three-transistor (3-T) cell CMOS one-time programmable (OTP) ROM array using CMOS antifuse (AF) based on permanent breakdown of MOSFET gate oxide is proposed, fabricated and characterized. The proposed 3-T OTP cell for ROM array is composed of an nMOS AF, a high-voltage blocking nMOS, and cell access transistor, all compatible with standard CMOS technology. The experimental results show that the proposed structure can be a viable technology option of high-density CMOS OTP ROM array for modern digital as well as analog circuits.

引用

页码：589 / 591

页数：3

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