Manipulation of resistive state of silicon oxide memristor by means of current limitation during electroforming

被引：16

作者：

Korolev, D. S. ^{[1
]}

Belov, A. I. ^{[1
]}

Okulich, E. V. ^{[1
]}

Okulich, V. I. ^{[1
]}

Guseinov, D. V. ^{[1
]}

Sidorenko, K. V. ^{[1
]}

Shuisky, R. A. ^{[1
]}

Antonov, I. N. ^{[1
]}

Gryaznov, E. G. ^{[1
]}

Gorshkov, O. N. ^{[1
]}

Tetelbaum, D. I. ^{[1
]}

Mikhaylov, A. N. ^{[1
]}

机构：

[1] Lobachevsky Univ, 23-3 Gagarin Prospect, Nizhnii Novgorod 603950, Russia

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2018年 / 122卷

基金：

俄罗斯科学基金会; 俄罗斯基础研究基金会;

关键词：

Memristor; Resistive switching; Current compliance; Conductance quantization; Resistance variation; Neural network;

D O I：

10.1016/j.spmi.2018.07.006

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Resistive switching and adaptive behavior of resistive state in response to electrical stimulation has been studied for the silicon oxide based memristive devices subjected to electroforming in the conditions of current compliance in comparison with the analogous memristive devices after electroforming without any current limitation. The limitation of current and temperature during electroforming affects the parameters of growing conductive filament ensembles and reduction oxidation reactions resulting in a gradual character and a wide dynamic range of resistance change important for neuromorphic applications.

引用

页码：371 / 376

页数：6

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