Electrochemically deposited photoactive CdIn2Se4 thin films:: Structural and optical studies

被引：12

作者：

Ahn, Ju-Hyun ^{[1
]}

Cai, Gangri ^{[1
]}

Mane, Rajararn S. ^{[1
]}

Todkar, V. V. ^{[1
]}

Shaikh, Arif V. ^{[1
]}

Chung, Hoeil ^{[1
]}

Yoon, Moon-Young ^{[1
]}

Han, Sung-Hwan ^{[1
]}

机构：

[1] Hanyang Univ, Inorgan Nanomat Lab, Dept Chem, Seoul 133791, South Korea

来源：

APPLIED SURFACE SCIENCE | 2007年 / 253卷 / 21期

关键词：

electrochemical synthesis; CdInSe4 thin films; XRD; SEM; AFM; photoelectrochemical cell;

D O I：

10.1016/j.apsusc.2007.04.081

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Electrochemical synthesis of photoactive cadmium-indium-selenide (CdIn2Se4) thin films at ambient temperature was reported. The nanocrystalline nature and 1:2:4 elemental chemical stoichiometric ratio for Cd, In and Se were obtained from the X-ray diffraction and energy dispersive X-ray analysis, respectively. Irregular shaped islands of about 400-500 nm in sizes composed of large number of small (similar to 30-40 nm) spherical grains were confirmed from the atomic force microscopy and the scanning electron microscopy images. The photoelectrochemical measurement of CdIn2Se4 film electrode in presence of 1 M polysulphide electrolyte revealed 0.42% photoelectrochemical device conversion efficiency, under the light illumination intensity of 80 mW/cm(2). (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：8588 / 8591

页数：4

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