Molecular Adsorption Behavior of Epitaxial Graphene Grown on 6H-SiC Faces

被引：13

作者：

Qazi, Muhammad ^{[1
]}

Nomani, Mohammad W. K. ^{[1
]}

Chandrashekhar, M. V. S. ^{[1
]}

Shields, Virgil B. ^{[2
]}

Spencer, Michael G. ^{[2
]}

Koley, Goutam ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

[2] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 07期

基金：

美国国家科学基金会;

关键词：

GAS; GRAPHITE; SENSORS; CARBON;

D O I：

10.1143/APEX.3.075101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial graphene layers grown on 6H-SiC faces were investigated for molecular adsorption by electron withdrawing NO(2) and electron donating NH(3). From amperometric measurements performed on these samples, we observed that epitaxial graphene grown on C-face SiC mostly behaved as a p-type sensing layer in contrast to the Si-face graphene, which behaved as n-type. Potentiometric sensing experiments performed reveal that epitaxial graphene on both C- and Si-faces have similar charge transfer mechanism with respect to a specific adsorbent gas. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

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