Theoretical analyses of In incorporation and compositional instability in coherently grown InGaN thin films

被引：18

作者：

Yayama, Tomoe ^{[1
]}

Kangawa, Yoshihiro ^{[1
,2
]}

Kakimoto, Koichi ^{[1
,2
]}

Koukitu, Akinori ^{[3
]}

机构：

[1] Kyushu Univ, Dept Aeronaut & Astronaut, 6-1 Kasuga Koen, Kasuga, Fukuoka 8168580, Japan

[2] Kyushu Univ, Appl Mech Res Inst, Fukuoka 8168580, Japan

[3] Tokyo Univ Agr & Technol, Inst Symbiot Sci & Technol, Div Appl Chem, Koganei, Tokyo 1848588, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期

关键词：

InGaN; MOVPE; chemical thermodynamics; models of film growth; VAPOR-PHASE EPITAXY; INN; GAN;

D O I：

10.1002/pssc.200983475

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We performed thermodynamic analyses to calculate the relationship between the input indium molar ratio and solid composition of a coherently grown InGaN thin film that is subjected compressive or tensile stress. The theoretical approach incorporates energy loss of a thin film system due to lattice constraint from the substrate. The results show that the indium composition x of coherently grown InGaN is lower than that of stress-free InGaN. This represents the composition pulling effect. We also studied stable growth modes under various growth conditions. The results suggest the importance of control of partial pressure of NH3 to optimize growth conditions of InGaN with a unique composition. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimr

引用

页数：3

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