A 2.0 μm cutoff wavelength separate absorption, charge, and multiplication layer avalanche photodiode using strain-compensated InGaAs quantum wells

被引：14

作者：

Dries, JC ^{[1
]}

Gokhale, MR ^{[1
]}

Forrest, SR ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Ctr Photon & Optoelect Mat, Princeton, NJ 08544 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 18期

关键词：

D O I：

10.1063/1.123904

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report an avalanche photodiode structure for use at wavelengths as long as 2.1 mm. Light is absorbed in a 100 period structure consisting of In0.83Ga0.17As quantum wells strain compensated by In0.83Ga0.17P barrier layers. Photogenerated electrons are injected into a high field In0.52Al0.48As (ionization rate ratio=0.2) gain region initiating low noise avalanche multiplication. Primary dark currents of similar to 5 nA and responsivities of 45 A/W at a wavelength of 1.9 mu m are observed. (C) 1999 American Institute of Physics. [S0003-6951(99)03118-6].

引用

页码：2581 / 2583

页数：3

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