Determining doping efficiency and mobility from conductivity and Seebeck data of n-doped C60 layers

被引：13

作者：

Menke, Torben ^{[1
]}

Ray, Debdutta ^{[1
]}

Kleemann, Hans ^{[1
]}

Leo, Karl ^{[1
]}

Riede, Moritz ^{[1
]}

机构：

[1] Tech Univ Dresden, Inst Angew Photophys, D-01062 Dresden, Germany

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2015年 / 252卷 / 08期

关键词：

C-60; fullerenes; molecular doping; organic semiconductors; Seebeck effect; ORGANIC SEMICONDUCTORS; TRANSISTORS; TRANSPORT; DOPANTS;

D O I：

10.1002/pssb.201552088

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this work, we introduce models for deriving lower limits for the key parameters doping efficiency, charge carrier concentration, and charge carrier mobility from conductivity data of doped organic semiconductors. The models are applied to data of thin layers of Fullerene C-60 n-doped by four different n-dopants. Combining these findings with thermoelectric Seebeck data, the energetic position of the transport level can be narrowed down and trends for the absolute values are derived. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1877 / 1883

页数：7

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