ITO-induced Columnar Polycrystalline Silicon Thin Films by CVD

被引：0

作者：

Du, Jun ^{[1
]}

Gu, Xin ^{[1
]}

Fu, Huaqiang ^{[1
]}

Guo, Haizhi ^{[1
]}

Liu, Jiao ^{[1
]}

Wu, Qi ^{[1
]}

Zou, Jianguo ^{[1
]}

机构：

[1] Nanchang Univ, Minist Educ, Key Lab Poyang Lake Ecol & Bioresource Utilizat, Dept Chem Engn,Coll Environm & Chem Engn, Nanchang 330031, Peoples R China

来源：

CHEMICAL VAPOR DEPOSITION | 2015年 / 21卷 / 4-6期

基金：

中国国家自然科学基金;

关键词：

ITO; Polycrystalline silicon; Sheet resistance; Thin film; INDUCED CRYSTALLIZATION; SOLAR-CELLS; PERFORMANCE;

D O I：

10.1002/cvde.201407138

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

CVD is used to prepare indium tin oxide (ITO)-induced polycrystalline silicon thin films with SiH4 as the precursor. The growth of columnar polycrystalline silicon is shown. The sheet resistance (R) of ITO-induced Si thin films ranges from about 167.3 to 466.2 /sq. Light absorption increases, as does the detected transmittance, by about 18.4%-30.5% for wavelengths less than 500-700nm.

引用

页码：140 / 144

页数：5

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