Interaction correction to the conductivity of two-dimensional electron gas in InxGa1-xAs/InP quantum well structure with strong spin-orbit coupling

被引：6
|
作者：
Minkov, G. M. [1 ,2 ]
Germanenko, A. V. [2 ]
Rut, O. E. [2 ]
Sherstobitov, A. A. [1 ,2 ]
机构：
[1] Inst Met Phys RAS, Ekaterinburg 620990, Russia
[2] Ural Fed Univ, Inst Nat Sci, Ekaterinburg 620000, Russia
来源：
PHYSICAL REVIEW B | 2012年 / 85卷 / 12期
关键词：
WEAK ANTILOCALIZATION; LOCALIZATION; MAGNETOCONDUCTANCE; MAGNETORESISTANCE; PRECESSION; SYSTEMS; PHASE; FIELD;
D O I：
10.1103/PhysRevB.85.125303
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electron-electron interaction quantum correction to the conductivity of the gated single quantum well InP/In0.53Ga0.47As heterostructures is investigated experimentally. The analysis of the temperature and magnetic field dependences of the conductivity tensor allows us to obtain the diffusion part of the interaction correction for different values of spin-relaxation rate, 1/tau(s). The surprising result is that the spin-relaxation processes do not suppress the interaction correction in the triplet channel and thus do not enhance the correction in magnitude contrary to theoretical expectations even in the case of relatively fast spin relaxation, 1/T tau(s) similar or equal to (20 - 25) >> 1.
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页数：7
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