Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium-gallium-zinc oxide thin-film transistors

被引：17

作者：

Chang, Geng-Wei ^{[3
,4
]}

Chang, Ting-Chang ^{[1
,2
]}

Syu, Yong-En ^{[1
,2
]}

Tsai, Tsung-Ming ^{[5
]}

Chang, Kuan-Chang ^{[5
]}

Tu, Chun-Hao ^{[6
]}

Jian, Fu-Yen ^{[1
,2
]}

Hung, Ya-Chi ^{[5
]}

Tai, Ya-Hsiang ^{[3
,4
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung, Taiwan

[2] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung, Taiwan

[3] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[4] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

[5] Natl Sun Yat Sen Univ, Inst Mat Sci & Engn, Kaohsiung 804, Taiwan

[6] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

来源：

THIN SOLID FILMS | 2011年 / 520卷 / 05期

关键词：

Indium Gallium Zinc Oxide (IGZO); Thin film transistors (TFTs); Passivation layer; FTIR;

D O I：

10.1016/j.tsf.2011.08.104

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this research, paraffin wax is employed as the passivation layer of the bottom gate amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs), and it is formed by sol-gel process in the atmosphere. The high yield and low cost passivation layer of sol-gel process technology has attracted much attention for current flat-panel-display manufacturing. Comparing with passivation-free a-IGZO TFTs, passivated devices exhibit a superior stability against positive gate bias stress in different ambient gas, demonstrating that paraffin wax shows gas-resisting characteristics for a-IGZO TFTs application. Furthermore, light-induced stretch-out phenomenon for paraffin wax passivated device is suppressed. This superior stability of the passivated device was attributed to the reduced total density of states (DOS) including the interfacial and semiconductor bulk trap densities. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1608 / 1611

页数：4

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