Suppression of Self-Heating Effects in 3-D V-NAND Flash Memory Using a Plugged Pillar-Shaped Heat Sink

被引：13

作者：

Park, Jun-Young ^{[1
]}

Yun, Dae-Hwan ^{[1
]}

Kim, Seong-Yeon ^{[1
]}

Choi, Yang-Kyu ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Sch Elect Engn, Daejeon 34141, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

Flashmemory; heat dissipation; heat sink; macaroni filler; reliability; self-heating; 3-dimensional (3D) V-NAND; THERMAL-CONDUCTIVITY; TRANSPORT;

D O I：

10.1109/LED.2018.2889037

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self-heating effects (SHEs) in 3-DV-NAND flash memory are investigated using simulations. First, temperature increase is estimated during the read operation, and a hot spot region along the bit-line is identified. Then, a novel bilayered macaroni filler is proposed to relieve the SHEs. A highly thermally conductive layer is plugged into the macaroni oxide filler as a heat sink. The heat dissipation efficiency is improved by up to 21% in the proposed structure. As a result, the reliability issues induced by SHEs can be avoided in V-NAND flash.

引用

页码：212 / 215

页数：4

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