Metamorphic InAs1-xBix/In0.83Al0.17As quantum well structures on InP for mid-infrared emission

被引：3
作者：
Gu, Y. [1 ]
Zhang, Y. G. [1 ]
Chen, X. Y. [1 ]
Ma, Y. J. [1 ]
Xi, S. P. [1 ]
Du, B. [1 ]
Ji, W. Y. [1 ]
Shi, Y. H. [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 12期
基金：
中国国家自然科学基金;
关键词：
MOLECULAR-BEAM-EPITAXY; LASER; PHOTOLUMINESCENCE;
D O I：
10.1063/1.4963129
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This work reports on InP-based metamorphic quantum well structures with bismuth incorporation for mid-infrared applications. InAs1-xBix quantum well structures have been grown on InP-based metamorphic In0.83Al0.17As buffers and photoluminescence beyond 3.1 mu m has been achieved at 300 K, which is longer than the referenced InAs quantum well. X-ray diffraction, cross-sectional transmission electron microscopy, and energy dispersive X-ray spectroscopy measurements reveal clear interfaces of InAsBi quantum well with low bismuth, while more defects and bismuth inhomogeneity were observed as more bismuth was incorporated. Published by AIP Publishing.
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页数：4
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