Wideband millimeter wave PIN diode SPDT switch using IBM 0.13 μm SiGe technology

被引：0
|
作者：
Lam, Kwanhim [1 ]
Ding, Hanyi [1 ]
Liu, Xuefeng [1 ]
Orner, Bradley A. [1 ]
Rascoe, Jay [1 ]
Dewitt, Barbara [1 ]
Mina, Essam [1 ]
Gaucher, Brian [2 ]
机构：
[1] IBM Corp, Syst & Technol Grp, 1000 River St, Essex Jct, VT 05452 USA
[2] IBM Corp, Div Res, TJ Watson Res, Yorktown Hts, NY 10598 USA
来源：
2007 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, VOLS 1 AND 2 | 2007年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Feasibility of wideband on-chip RF switch operating at millimeter wave frequencies using PIN diodes in IBM.13um SiGe technology is demonstrated. A SPDT reflective switch targeting 60GHz wireless and radar applications is designed, fabricated, and measured. Good correlations between simulation and hardware are reported. Measured data show 2.0 to 2.7 dB of insertion loss over 51 to 78 GHz bandwidth with better than 12dB return loss and 25 to 35 dB of isolation.
引用
收藏
页码：567 / +
页数：2
相关论文
共 50 条
  • [31] Analysis and design of low power wideband programmable frequency divider in 0.13-μm SiGe BiCMOS technology
    Cheng, Guoxiao
    Li, Zhiqun
    Wu, Wen
    AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 2021, 138
  • [32] Ultra Wideband Receiver Protection Limiter Using 0.13μm pHEMT Technology
    Chaturvedi, Sandeep
    Badnikar, S. L.
    Naik, Anant. A.
    2017 IEEE MTT-S INTERNATIONAL MICROWAVE AND RF CONFERENCE (IMARC), 2017, : 155 - 158
  • [33] Millimeter-wave voltage-controlled oscillators in 0.13-μm CMOS technology
    Cao, Changhua
    O, Kenneth K.
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2006, 41 (06) : 1297 - 1304
  • [34] Optimal Design of Heterojunction AIGaAs/GaAs PIN Diode Millimeter-Wave Switch and Its Imaging Application
    Wang Zeyu
    Li Chenchen
    Gao YiQiang
    Sun Hao
    Yang Minghui
    Sun Xiaowei
    LASER & OPTOELECTRONICS PROGRESS, 2021, 58 (22)
  • [35] Analysis and Design of Wideband Single-Pole Double-Throw (SPDT) Transmitter/Receiver (T/R) Switch with PIN Diode for Transceiver Systems
    Madany, Yasser M.
    Ismail, Nouer Eldin H.
    Hassan, Hayman A.
    2013 IEEE ANTENNAS AND PROPAGATION SOCIETY INTERNATIONAL SYMPOSIUM (APSURSI), 2013, : 1004 - 1005
  • [36] A Millimeter-Wave 8-bits Digital Variable Gain Amplifier in 0.13-μm SiGe BiCMOS
    Wang, Yu
    Meng, Fanyi
    Fu, Haipeng
    Ma, Kaixue
    2020 13TH UK-EUROPE-CHINA WORKSHOP ON MILLIMETRE-WAVES AND TERAHERTZ TECHNOLOGIES (UCMMT2020), 2020,
  • [37] A DC-50 GHz SPDT Switch with Maximum Insertion Loss of 1.9 dB in a Commercial 0.13-μm SOI Technology
    Yu, Bo
    Ma, Kaixue
    Meng, Fanyi
    Yang, Wanlan
    Yeo, Kiat Seng
    Zhang, Shaoqiang
    Purakh, Raj Verma
    2015 INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC), 2015, : 197 - 198
  • [38] High isolation 10GHz to 20 GHz SPDT switch design using novel octagonal PIN diode structure
    Sun, PP
    Wang, L
    Upadhyaya, P
    Heo, D
    2005 IEEE WORKSHOP ON MICROELECTRONICS AND ELECTRON DEVICES, 2005, : 38 - 41
  • [39] 15 GHz SPDT Switch Design using 0.15 μm GaAs Technology for Microwave Applications
    Sanusi, Rasidah
    Ismail, Mohd Azmi
    Norhapizin, K.
    Rahim, A. I. Abdul
    Marzuki, Arjuna
    Yahya, Mohamed Razman
    ICED: 2008 INTERNATIONAL CONFERENCE ON ELECTRONIC DESIGN, VOLS 1 AND 2, 2008, : 228 - +
  • [40] 30 GHz SPDT Switch Design using 0.15 μm GaAs Technology for Microwave Applications
    Sanusi, Rasidah
    Ismail, Mohd Azmi
    Norhapizin, K.
    Rahim, A. I. Abdul
    Marzuki, Arjuna
    Yahya, Mohamed Razman
    ICSE: 2008 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 2008, : 130 - +
12345