Wideband millimeter wave PIN diode SPDT switch using IBM 0.13 μm SiGe technology

被引：0
|
作者：
Lam, Kwanhim [1 ]
Ding, Hanyi [1 ]
Liu, Xuefeng [1 ]
Orner, Bradley A. [1 ]
Rascoe, Jay [1 ]
Dewitt, Barbara [1 ]
Mina, Essam [1 ]
Gaucher, Brian [2 ]
机构：
[1] IBM Corp, Syst & Technol Grp, 1000 River St, Essex Jct, VT 05452 USA
[2] IBM Corp, Div Res, TJ Watson Res, Yorktown Hts, NY 10598 USA
来源：
2007 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, VOLS 1 AND 2 | 2007年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Feasibility of wideband on-chip RF switch operating at millimeter wave frequencies using PIN diodes in IBM.13um SiGe technology is demonstrated. A SPDT reflective switch targeting 60GHz wireless and radar applications is designed, fabricated, and measured. Good correlations between simulation and hardware are reported. Measured data show 2.0 to 2.7 dB of insertion loss over 51 to 78 GHz bandwidth with better than 12dB return loss and 25 to 35 dB of isolation.
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页码：567 / +
页数：2
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