Wideband millimeter wave PIN diode SPDT switch using IBM 0.13 μm SiGe technology

被引：0
|
作者：
Lam, Kwanhim [1 ]
Ding, Hanyi [1 ]
Liu, Xuefeng [1 ]
Orner, Bradley A. [1 ]
Rascoe, Jay [1 ]
Dewitt, Barbara [1 ]
Mina, Essam [1 ]
Gaucher, Brian [2 ]
机构：
[1] IBM Corp, Syst & Technol Grp, 1000 River St, Essex Jct, VT 05452 USA
[2] IBM Corp, Div Res, TJ Watson Res, Yorktown Hts, NY 10598 USA
来源：
2007 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, VOLS 1 AND 2 | 2007年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Feasibility of wideband on-chip RF switch operating at millimeter wave frequencies using PIN diodes in IBM.13um SiGe technology is demonstrated. A SPDT reflective switch targeting 60GHz wireless and radar applications is designed, fabricated, and measured. Good correlations between simulation and hardware are reported. Measured data show 2.0 to 2.7 dB of insertion loss over 51 to 78 GHz bandwidth with better than 12dB return loss and 25 to 35 dB of isolation.
引用
收藏
页码：567 / +
页数：2
相关论文
共 50 条
  • [1] A millimeter-wave wideband SPDT switch with traveling-wave concept using 0.13-μm CMOS process
    Yeh, MC
    Tsai, ZM
    Lin, KY
    Wang, H
    Su, CY
    Chao, CP
    2005 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-4, 2005, : 53 - 56
  • [2] D-Band RF-MEMS SPDT Switch in a 0.13 μm SiGe BiCMOS Technology
    Wipf, Selin Tolunay
    Goeritz, Alexander
    Wietstruck, Matthias
    Wipf, Christian
    Tillack, Bernd
    Kaynak, Mehmet
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2016, 26 (12) : 1002 - 1004
  • [3] Millimeter-Wave RF-MEMS SPDT Switch Networks in a SiGe BiCMOS Process Technology
    Reyaz, S.
    Samuelsson, C.
    Malmqvist, R.
    Kaynak, M.
    Rydberg, A.
    2012 42ND EUROPEAN MICROWAVE CONFERENCE (EUMC), 2012, : 1071 - 1074
  • [4] High-Performance W-band LNA and SPDT Switch in 0.13μm SiGe HBT Technology
    Ulusoy, A. Cagri
    Schmid, Robert L.
    Kaynak, Mehmet
    Tillack, Bernd
    Cressler, John D.
    2015 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), 2015, : 162 - 164
  • [5] Millimeter-Wave RF-MEMS SPDT Switch Networks in a SiGe BiCMOS Process Technology
    Reyaz, S.
    Samuelsson, C.
    Malmqvist, R.
    Kaynak, M.
    Rydberg, A.
    2012 7TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2012, : 691 - 694
  • [6] Wideband high-isolation SPDT RF switch in 0.18-μm SiGe BiCMOS technology
    Ha, Byeong Wan
    Seo, Chang Won
    Cho, Choon Sik
    Kim, Young-Jin
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2016, 87 (01) : 11 - 19
  • [7] Design of High-Performance E-band SPDT Switch and LNA in 0.13 μm SiGe BiCMOS Technology
    Ahamed, Raju
    Varonen, Mikko
    Parveg, Dristy
    Saijets, Jan
    Halonen, Kari A. I.
    2017 IEEE NORDIC CIRCUITS AND SYSTEMS CONFERENCE (NORCAS): NORCHIP AND INTERNATIONAL SYMPOSIUM OF SYSTEM-ON-CHIP (SOC), 2017,
  • [8] Wideband Millimeter-Wave On-Chip Quadrature Coupler With Improved In-Band Flatness in 0.13-μm SiGe Technology
    Hou, Zhang Ju
    Yang, Yang
    Chiu, Leung
    Zhu, Xi
    Xue, Quan
    IEEE ELECTRON DEVICE LETTERS, 2018, 39 (05) : 652 - 655
  • [9] Wideband Millimeter-Wave Power Divider and SPDT Switch Using Inverting Spiral-Coupled-Line
    Lin, Yo-Sheng
    Lan, Kai-Siang
    Chen, Bo-Shun
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2023, 70 (04) : 1575 - 1579
  • [10] A 5∼14GHz Wideband LNA using 0.13μm SiGe BiCMOS Technology
    He, Weipeng
    Li, Zhiqun
    Yao, Yan
    Xue, Yongbin
    Luo, Lei
    Cheng, Guoxiao
    PROCEEDINGS OF 2018 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS, TECHNOLOGIES AND APPLICATIONS (ICTA 2018), 2018, : 59 - 60
12345