Improving near-room-temperature thermoelectrics in SnTe-MnTe alloys

被引:19
作者
Chen, Zhiyu [1 ]
Tang, Jing [2 ]
Guo, Xuming [1 ]
Zhang, Fujie [1 ]
Tang, Mingjing [1 ]
Xiong, Fen [3 ]
Chen, Yue [3 ]
Ang, Ran [1 ,4 ]
机构
[1] Sichuan Univ, Inst Nucl Sci & Technol, Minist Educ, Key Lab Radiat Phys & Technol, Chengdu 610064, Peoples R China
[2] Tongji Univ, Sch Mat Sci & Engn, Interdisciplinary Mat Res Ctr, 4800 Caoan Rd, Shanghai 201804, Peoples R China
[3] Univ Hong Kong, Dept Mech Engn, Pokfulam Rd, Hong Kong, Peoples R China
[4] Sichuan Univ, Inst New Energy & Low Carbon Technol, Chengdu 610065, Peoples R China
关键词
THERMAL-CONDUCTIVITY; VALENCE-BAND; PERFORMANCE; CONVERGENCE; EFFICIENCY; DEFECTS; LEAD;
D O I
10.1063/5.0006739
中图分类号
O59 [应用物理学];
学科分类号
摘要
The rich capabilities for both electronic and phonon engineering in SnTe are highly desirable for achieving high thermoelectric performance. Alloying high-solubility MnTe (similar to 15%) leads to substitutional defects for reducing lattice thermal conductivity and band convergence for enhancing electronic performance, and thus, an improvement of thermoelectric performance of SnTe is realized. However, there is no evidence that the electronic and phonon transport properties are fully optimized in SnTe-15%MnTe thermoelectrics, especially for the near-roomtemperature (< 573K) thermoelectric performance, which still needs a sufficient promotion. Here, the substituted 2% Bi in SnTe-15%MnTe alloys dramatically increases the near-room-temperature zT and peak zT to similar to 0.72 (at 550 K) and similar to 1.3 (at 850K), respectively. Combining the experimental evidence and the first-principles calculations, we demonstrate that the prominent enhancement of electronic performance arises from the Bi-doping-driven transport valence band alignment and the carrier concentration optimization. Furthermore, the Debye-Callaway model verifies that the reduction in lattice thermal conductivity is dominated by the Bi substitutional defects. The present findings reveal the importance of transport engineering in achieving high thermoelectric performance particularly near room temperature. Published under license by AIP Publishing.
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页数:5
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