Electric field induced reversible control of visible photoluminescence from ZnO nanoparticles

被引:16
作者
Ghosh, Manoranjan [1 ]
Raychaudhuri, A. K. [1 ]
机构
[1] SN Bose Natl Ctr Basic Sci, DST Unit Nanosci, Kolkata 700098, India
关键词
D O I
10.1063/1.3578194
中图分类号
O59 [应用物理学];
学科分类号
摘要
Reversible control of the photoluminescence of ZnO occurring in the visible range, has been achieved by application of a few volts (<5 V) to a device consisting of nanostructured ZnO film sandwiched between indium tin oxide electrode and polyethylene oxide-lithium perchlorate, a solid polymer electrolyte. The photoluminescence intensity shows nearly 100% modulation with a response time less than 30 s, when the bias is applied at the electrolyte electrode. A model is proposed for the observed effect that is based on defect states of ZnO and the band bending at the ZnO-electrolyte interface that can be changed by the applied bias. (C) 2011 American Institute of Physics. [doi:10.1063/1.3578194]
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页数:3
相关论文
共 10 条
  • [1] Bott A.W., 1998, Current Separations, V17, P87, DOI DOI 10.1016/0038-092X(64)90079-9
  • [2] Structural and optical properties of Zn1-xMgxO nanocrystals obtained by low temperature method
    Ghosh, Manoranjan
    Raychaudhuri, A. K.
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 100 (03)
  • [3] Shape transition in ZnO nanostructures and its effect on blue-green photoluminescence
    Ghosh, Manoranjan
    Raychaudhuri, A. K.
    [J]. NANOTECHNOLOGY, 2008, 19 (44)
  • [4] Ionic environment control of visible photoluminescence from ZnO nanoparticles
    Ghosh, Manoranjan
    Raychaudhuri, A. K.
    [J]. APPLIED PHYSICS LETTERS, 2008, 93 (12)
  • [5] PHOTO-LUMINESCENT PROPERTIES OF N-GAAS ELECTRODES - APPLICATIONS OF THE DEAD-LAYER MODEL TO PHOTO-ELECTROCHEMICAL CELLS
    HOBSON, WS
    ELLIS, AB
    [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) : 5956 - 5960
  • [6] Electrophotoluminescence of ZnO film
    Ma, Xiangyang
    Chen, Peiliang
    Li, Dongsheng
    Zhang, Yuanyuan
    Yang, Deren
    [J]. APPLIED PHYSICS LETTERS, 2007, 91 (02)
  • [7] Bound exciton and donor-acceptor pair recombinations in ZnO
    Meyer, BK
    Alves, H
    Hofmann, DM
    Kriegseis, W
    Forster, D
    Bertram, F
    Christen, J
    Hoffmann, A
    Strassburg, M
    Dworzak, M
    Haboeck, U
    Rodina, AV
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2004, 241 (02): : 231 - 260
  • [8] Influence of the electric field on the excitonic luminescence of epitaxial GaN films
    Nelson, DK
    Kagan, VD
    Kalinina, EV
    Jacobson, MA
    [J]. JOURNAL OF LUMINESCENCE, 1997, 72-4 : 865 - 866
  • [9] A comprehensive review of ZnO materials and devices -: art. no. 041301
    Ozgür, U
    Alivov, YI
    Liu, C
    Teke, A
    Reshchikov, MA
    Dogan, S
    Avrutin, V
    Cho, SJ
    Morkoç, H
    [J]. JOURNAL OF APPLIED PHYSICS, 2005, 98 (04) : 1 - 103
  • [10] Vanheusden K, 1996, APPL PHYS LETT, V68, P403, DOI 10.1063/1.116699