Oxidation and diffusion study on AlCrVN hard coatings using oxygen isotopes 16O and 18O

被引:16
作者
Franz, R. [1 ]
Schnoeller, J. [2 ]
Hutter, H. [2 ]
Mitterer, C. [1 ]
机构
[1] Univ Leoben, Dept Phys Met & Mat Testing, Christian Doppler Lab Adv Hard Coatings, A-8700 Leoben, Austria
[2] Vienna Univ Technol, Dept Chem Technol & Analyt, A-1060 Vienna, Austria
关键词
TOF-SIMS; Depth profiling; AlCrVN; Hard coatings; Diffusion; Isotopic enriched oxygen; HIGH-TEMPERATURE OXIDATION; X-RAY-ABSORPTION; THIN-FILMS; TOF-SIMS; AL1-XCRXN COATINGS; RESISTANCE; CRN; BEHAVIOR; NITRIDE; CR-1-XALXN;
D O I
10.1016/j.tsf.2011.01.100
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The present work aims to investigate the oxidation behaviour of AlCrVN hard coatings of equal composition but of different crystal structure. In order to gain more information about the mechanisms that are active during oxidation, a two-stage oxidation procedure has been applied where different isotopes, O-16 and O-18, were introduced in each step. The analysis by means of secondary ion mass spectrometry depth profiling with its inherent isotope selectivity provided information on the general oxidation behaviour as well as the oxygen diffusion during the oxidation process. The single-phase coating with its face-centred cubic (fcc) structure presents a higher oxidation resistance as compared to the dual-phase coating containing a wurtzite and an fcc phase. After the annealing treatment the surface of the latter is entirely covered by VO2 and V2O5 as evidenced by Raman spectroscopy. The single-phase coating, on the other hand, reveals unoxidised coating material and AlVO4 crystals. However, even though exhibiting a significantly different oxidation resistance, the oxygen diffusion is similar. In both cases the peak values of O-18, which was introduced in the second stage, were found near the oxide-nitride interface indicating that O atoms diffused through the already formed oxides. Additional experiments using a gas mixture comprising natural water vapour (H2O)-O-16 and O-18(2) revealed that mainly the presence of molecular oxygen causes oxidation as with increasing water vapour partial pressure the oxide layer thickness was significantly reduced. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:3974 / 3981
页数:8
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