Hydrogen sensors based on AlGaN/AIN/GaN HEMT

被引：31

作者：

Wang, X. H. ^{[1
]}

Wang, X. L. ^{[1
]}

Feng, C. ^{[1
]}

Yang, C. B. ^{[1
]}

Wang, B. Z. ^{[1
]}

Ran, J. X. ^{[1
]}

Xiao, H. L. ^{[1
]}

Wang, C. M. ^{[1
]}

Wang, J. X. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China

来源：

MICROELECTRONICS JOURNAL | 2008年 / 39卷 / 01期

关键词：

AlGaN/AIN/GaN HEMT; hydrogen sensor;

D O I：

10.1016/j.mejo.2007.10.022

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pt/AlGaN/AIN/GaN high electron mobility transistors (HEMT) were fabricated and characterized for hydrogen sensing. Pt and Ti/Al/Ni/Au metals were evaporated to form the Schottky contact and the ohmic contact, respectively. The sensors can be operated in either the field effect transistor (FET) mode or the Schottky diode mode. Current changes and time dependence of the sensors under the FET and diode modes were compared. When the sensor was operated in the FET mode, the sensor can have larger current change of 8 mA, but its sensitivity is only about 0.2. In the diode mode, the current change was very small under the reverse bias but it increased greatly and gradually saturated at 0.8 mA under the forward bias. The sensor had much higher sensitivity when operated in the diode mode than in the FET mode. The oxygen in the air could accelerate the desorption of the hydrogen and the recovery of the sensor. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：20 / 23

页数：4

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