Dual N/Pb ion-implanted Si: Temperature dependence of the novel shift of the Pb peak under electron beam annealing

被引:1
作者
Markwitz, Andreas [1 ]
Fang, Fang [1 ]
Johnson, Peter B. [1 ]
机构
[1] GNS Sci, Natl Isotope Ctr, Lower Hutt 5010, New Zealand
关键词
Silicon; Dual low-energy ion implantation; N implantation; Pb implantation; Electron beam annealing; Pb diffusion; Si nanowhisker formation; SELF-ASSEMBLED SILICON; NANOSTRUCTURES; NANOCRYSTALS; DIFFUSION; SURFACE;
D O I
10.1016/j.apsusc.2010.12.114
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
(100) Si was dual ion-implanted with 24 key N and 7 key Pb to peak concentrations similar to 10 at.%. Implanted samples were then electron beam annealed (EBA) at a peak temperature T for 30 s with T ranging from 100 degrees C to 900 degrees C and for 15 s at 1000 degrees C. Pb profiles were measured using RBS and surfaces characterised by AFM. For T up to 500 degrees C there was no shift in the profile from the implanted depth similar to 10 nm. For higher values of T a striking feature was the large movement of the Pb profile away from the surface without a significant change in width or Pb content. The profile depths were: similar to 40 nm for 600 degrees C, similar to 68 nm for 700-900 degrees C and similar to 80 nm for 1000 degrees C. The response to EBA was found to be strongly dependent on both ion implantation order and Si starting structure. For (1 0 0)Si nanowhiskers formed on the treated surfaces for T=900 degrees C and 1000 degrees C. A model is developed based on the restructuring of the amorphous implanted layer under EBA. It is proposed that a compaction starting at the surface sweeps the Pb before it via a stress interaction as it advances into the Si. (c) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:4856 / 4862
页数:7
相关论文
共 21 条
[3]   Influence of ion induced amorphicity on the diffusion of gold into silicon [J].
Ehrhardt, J. ;
Klimmer, A. ;
Eisenmenger, J. ;
Mueller, Th. ;
Boyen, H. -G. ;
Ziemann, P. ;
Biskupek, J. ;
Kaiser, U. .
JOURNAL OF APPLIED PHYSICS, 2006, 100 (06)
[4]   Controlled fabrication of Si nanostructures by high vacuum electron beam annealing [J].
Fang, F. ;
Markwitz, A. .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2009, 41 (10) :1853-1858
[5]   Onset Temperature for Si Nanostructure Growth on Si Substrate During High Vacuum Electron Beam Annealing [J].
Fang, F. ;
Markwitz, A. .
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2009, 9 (05) :2950-2955
[6]  
HUICHAI Y, 2008, APPL PHYS LETT, V93
[7]   Effect of crystal orientation on self-assembled silicon nanostructures formed by electron-beam annealing -: art. no. 094301 [J].
Johnson, S ;
Markwitz, A ;
Rudolphi, M ;
Baumann, H ;
Kuo, PY ;
Blaikie, R ;
Mücklich, A .
JOURNAL OF APPLIED PHYSICS, 2005, 97 (09)
[8]   Field emission properties of self-assembled silicon nanostructures on n- and p-type silicon [J].
Johnson, S ;
Markwitz, A ;
Rudolphi, M ;
Baumann, H ;
Oei, SP ;
Teo, KBK ;
Milne, WI .
APPLIED PHYSICS LETTERS, 2004, 85 (15) :3277-3279
[9]   Nanostructuring of silicon(100) using electron beam rapid thermal annealing [J].
Johnson, S ;
Markwitz, A ;
Rudolphi, M ;
Baumann, H .
JOURNAL OF APPLIED PHYSICS, 2004, 96 (01) :605-609
[10]   Universal characteristics of resonant-tunneling field emission from nanostructured surfaces [J].
Johnson, S. ;
Zulicke, U. ;
Markwitz, A. .
JOURNAL OF APPLIED PHYSICS, 2007, 101 (12)