Feasibility study of aluminium nitride formation by nitrogen plasma source ion implantation on aluminium

被引：11

作者：

Chakraborty, J ^{[1
]}

Mukherjee, S ^{[1
]}

Raole, PM ^{[1
]}

John, PI ^{[1
]}

机构：

[1] Inst Plasma Res, FCIPT, GIDC, Gandhinagar 382044, India

来源：

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 2001年 / 304卷 / 1-2期

关键词：

aluminium nitride; nitrogen; plasma;

D O I：

10.1016/S0921-5093(00)01643-9

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Formation of aluminium nitride (AlN) on aluminium surface by nitrogen plasma source ion implantation (PSII) technique is an active area of research. The present work is being carried out with a view to investigate the formation of AlN on Al surface by nitrogen PSII at low energies of 3 and 10 keV with ion dose similar to 10(18) ions/cm(2). Surface characterisation by X-ray photoelectron spectroscopy shows that nitrogen is bound to aluminium, Glancing angle S-say diffraction study, has been performed on PSII treated Al surface, which shows the presence of crystalline AlN. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：910 / 913

页数：4

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