Efficacy of diode laser therapy on osseointegration of dental implants: A split-mouth clinical study

Aim: The purpose of the present study was to investigate the effect of low-level laser therapy (LLLT) on postoperative osseointegration and secondary stability in symmetrical dental implants. Material and Methods: Patients with symmetrical missing teeth in the maxilla and mandible participated in the present study. Implants were reserved randomly into laser and control groups. Indium Gallium Arsenide Phosphide (InGaAsP) semiconductor diode laser with a wavelength of 940 nm (total array area 0.8 cm(2), contact probe diameter 1 cm, total power 200 mW, average power intensity 250 mW/cm(2), total energy 40 J, average energy intensity 50 J/cm(2)) was used in the study. The buccal, lingual, mesial, and distal sides of the dental implants were irradiated with a laser. Six sessions of LLLT were given to the laser group implants for 2 months. The stability of these implants was measured with Periotest (R). The mean Periotest (R) values were recorded at baseline at 14, 30, and 90 days. Results: No significant differences were observed among the groups in the Periotest (R) (Periotest (R), Siemens AG, Bensheim, Germany) values at baseline (P=0.985). A larger decrease in the Periotest (R) values of the laser group was observed compared to the control group for 90 days. The Periotest (R) values on the 30th day (P=0.043) and the 90th day (P<0.001) were significantly lower in the laser group. Discussion: LLLT application stimulates biological tissues and increases both the bone healing capacity and secondary stability of dental implants. LLLT enhances the long-term success of dental implants by strengthening osseointegration and allows early implant loading.