Pb dimerization greatly accelerates charge losses in MAPbI3: Time-domain ab initio analysis

被引:15
作者
Zhang, Zhaosheng [1 ]
Qiao, Lu [1 ]
Mora-Perez, Carlos [2 ]
Long, Run [1 ]
Prezhdo, Oleg V. [2 ]
机构
[1] Beijing Normal Univ, Coll Chem, Key Lab Theoret & Computat Photochem, Minist Educ, Beijing 100875, Peoples R China
[2] Univ Southern Calif, Dept Chem, Los Angeles, CA 90089 USA
基金
美国国家科学基金会;
关键词
NONADIABATIC MOLECULAR-DYNAMICS; ELECTRON-HOLE RECOMBINATION; METHYLAMMONIUM LEAD IODIDE; PEROVSKITE SOLAR-CELLS; TEMPERATURE-DEPENDENCE; DEFECT TOLERANCE; HIGH-PERFORMANCE; PYXAID PROGRAM; DIFFUSION; EFFICIENT;
D O I
10.1063/1.5131342
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Metal halide perovskites constitute a new type of semiconducting materials with long charge carrier lifetimes and efficient light-harvesting. The performance of perovskite solar cells and related devices is limited by nonradiative charge and energy losses, facilitated by defects. Combining nonadiabatic molecular dynamics and time-domain density functional theory, we demonstrate that charge losses depend strongly on the defect chemical state. By considering an extra Pb atom in CH3NH3PbI3, which is a common defect in lead halide perovskites, we investigate its influence on charge trapping and recombination. In a chemically inert form as a Pb interstitial, the extra Pb atom has only a mild influence on charge recombination. However, if the extra Pb atom binds to a native Pb atom to form a dimer, the charge trapping and recombination are greatly accelerated because the Pb-dimer creates a localized midgap trap state that couples strongly to the perovskite valence band edge. Holes disappear from the valence band two orders of magnitude faster than in the pristine perovskite and recombine with conduction band electrons one order of magnitude faster. The simulations identify the phonon modes involved in the nonradiative charge trapping and recombination and highlight the importance of rapid decoherence within the electronic subsystem for long carrier lifetimes. The detailed atomistic analysis of the charge trapping and recombination mechanisms enriches the understanding of defect properties and provides theoretical guidance for improving perovskite performance. Published under license by AIP Publishing.
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页数:8
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