Effects of oxygen coimplantation on the formation of donor centers in erbium-implanted silicon

被引：3
作者：
Emtsev, VV
Poloskin, DS
Shek, EI
Sobolev, NA
Kimerling, LC
机构：
[1] Univ Amsterdam, Van der Waals Zeeman Inst, NL-1018 XE Amsterdam, Netherlands
[2] Russian Acad Sci, Ioffe Physicotech Inst, St Petersburg 194021, Russia
[3] MIT, Ctr Mat Proc, Cambridge, MA 02139 USA
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 81卷 / 1-3期
基金：
俄罗斯基础研究基金会;
关键词：
silicon; implantation; erbium; oxygen; thermal donors;
D O I：
10.1016/S0921-5107(00)00739-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Three kinds of dominating donor centers formed in erbium-implanted silicon due to postimglantation annealing iu the range from T = 700 to 900 degreesC are studied. Shallow donors with ionization energies between 20 and 40 meV are attributed to electrically active oxygen aggregates with the involvement of intrinsic defects. Two Other kinds of donors at approximate to E-C-70 and -120 meV are identified as [Er-O] complexes. The latter donors undergo modifications at T = 800 degreesC. As a result, donor centers at approximate to E-C-150 meV are formed. New donors at approximate to EC-100 meV also make their appearance after annealing to T = 900 degreesC. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：74 / 76
页数：3
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